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Send til en ven   Udskriv18/5 2010 kl. 11:36
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50 nye RF/mikrobølge produkter baseret på SiGe teknologi

NXP Semiconductor lancerer en lang række nye robuste og kostoptimerede RF/mikrobølge komponenter (in english).

Targeting high frequency radio applications, NXP Semiconductors today announced the launch of a series of new products developed in the latest SiGe (silicon-germanium) process technology. Addressing the industry’s growing demand for more robust, cost-effective and highly integrated silicon based technology, NXP will offer a total of more than 50 products based on SiGe:C by end of 2010.

Delivering high power gain and excellent dynamic range, NXP’s QUBiC4 SiGe:C process is specifically designed to meet the needs of real-life, high-frequency applications in the wireless, broadband communications, networking, and multimedia markets.


With more than a dozen silicon germanium based products in the market, NXP has developed and shipped more than 25 million RF products using its QUBiC4 technology.  The volume shipment demonstrates the maturity of NXP’s QUBiC4 process technology as well as industry acknowledgement of how the SiGe:C process can deliver the performance of GaAs technology.  

- As a global leader in RF technology and component design, NXP is committed to the development of products produced with SiGe:C technology to address the fast-moving dynamics of the RF/microwave  markets. We endeavor to provide cost-effective, integrated, high frequency solutions with the performance of gallium-arsenide (GaAs) technologies using a silicon-based process, says onald van Cleef, general manager, RF small signal business, NXP Semiconductors.

NXP’s innovative high-performance SiGe:C QUBiC4 process allows manufacturers of  wireless equipments to add more functionality onto devices with less space, competitive cost, reliability and manufacturing advantage. QUBiC4 technology speeds the migration from GaAs technology to silicon by enabling cutting-edge, low-noise performance and IP availability.

NXP offers three variants of the QUBiC4 technology: QUBiC4+, a silicon-based process for applications up to 5GHz such as medium power amplifiers; QUBiC4X, a 0.25µm SiGe:C process introduced about 6 years ago, typically used for applications up to 30GHz and very low noise applications such as GPS; and the most recent 0.25µm QUBiC4Xi SiGe:C process, offering on Ft in excess of 200GHz, which is particularly suited for applications above 30GHz and those requiring minimum noise figure, such as VSAT and radar.

With proven IP and state-of-the-art in-house fabrication for volume production, NXP’s QUBiC4 SiGe:C technology has been designed to improve overall RF performance and make the components less expensive, while offering higher and more flexible performance than their gallium-arsenide (GaAs) counterparts.

With more than forty-five years of extensive experience in RF modeling, design and packaging, NXP’s QUBiC4 combines the performance of gallium-arsenide (GaAs) technologies with the reliability of a silicon-based process. With the continued growth of high-speed-digital data transmission and wireless communications technology, NXP’s QUBiC4 technology is advancing solutions traditionally offered only by GaAs technologies at a lower cost, with higher integration and added features. It also addresses the need for low power consumption.

Applications for QUBiC4-based products ranges from mobile platforms, personal navigation devices, AESA radars, satellite DBS/-VSAT, e-metering, software-defined radios (SDR), base stations, point-to-point radio links, and WLAN, where high frequency and high integration levels are essential. End users can benefit from increased functionality on smaller and lighter weight mobile phones.

A total of more than 50 NXP products based on the SiGe:C process will be available by the end of 2010.   A dozen products are already available, including GPS Low Noise Amplifiers such as the BGU7005, Medium Power Amplifiers such as the BGA7124 and LO Generators such as the TFF1003HN.

Another 40 new products will be released in May and throughout the year, including new 6th and 7th generation wideband transistors, Low Noise Amplifiers, Medium Power Amplifiers, Variable Gain Amplifiers and LO Generators.

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