Send til en ven   Udskriv6/2 2012 kl. 17:14

Cree klar med SPICE model for banebrydende SiC-baserede MOSFETs

Cree står bag industriens første kommercielt tilgængelig SiC MOSFET, og firmaet kan nu levere en fuldt kvalificeret SPICE model til brug i forbindelse med board-level simulering (in english).

Cree, Inc., a market leader in silicon carbide (SiC) power devices, has expanded its design-in support for the industry’s first commercially-available SiC MOSFET power devices with a fully-qualified SPICE model.

Using the new SPICE model, circuit designers can easily evaluate the benefits Cree’s SiC Z-FET MOSFETs provide for achieving a higher level of efficiency than is possible with conventional silicon power switching devices for comparably-rated devices.

SiC MOSFETs have significantly different characteristics than silicon devices and therefore require a SiC-specific model for accurate circuit simulations. Cree’s behavior-based, temperature-dependent SPICE model is compatible with the LT spice simulation program and enables power electronics design engineers to reliably simulate the advanced switching performance of Cree CMF10120D and CMF20120D Z-FETs in board-level circuit designs.

Cree SiC MOSFETs are capable of delivering switching frequencies that are up to 10 times higher than IGBT-based solutions. Their higher switching frequencies can enable smaller magnetic and capacitive elements, thereby shrinking the overall size, weight and cost of power electronics systems.

This SiC MOSFET SPICE model adds to Cree’s comprehensive suite of design-in support tools, technical documentation, and reliability information to provide power electronics engineers with the design resources necessary to implement SiC power devices into the next generation of power systems.

The Cree SiC MOSFET SPICE model is available for download at www.cree.com/power/mosfet.asp.

In addition, customers can download published specifications and detailed design guidelines and request samples. For more information about Cree’s SiC power devices:
www.cree.com/power.

Seneste nyheder

• •  Ny standard for trådløs opladning i støbeskeen
• •  Stor opbakning til nye M2M standard i 'white space' området
• •  AMD Embedded G-Series undestøtter Windows RTOS
• •  Ny 600V IGBT platform
• •  COM-modul med næste generation Atom dual-core processorer
• •  Danfoss afhænder datterselskab
• •  Renesas hos RS
• •  Würth Elektronik på vej med transformerkomponenter til trådløs opladning
• •  Segger Microcontroller hos Farnell
• •  I/Q demulator med ultrabred båndbredde
• •  Nyt kompakt COM modul fra VIA
• •  Low-cost fugtigheds- og temperatursensor
• •  Brüel & Kjær og Agilent samarbejder om 'voice-over-LTE' testsystemer
• •  Digi-Key åbner teknologiforum på dansk hjemmeside
• •  Interkonnekteringsystem understøtter 28 Gbit/s datatransmission
• •  Lattice introducerer helt ny power management arkitektur
• •  Første LED-controller med konstant effektregulering
• •  Micron udvikler DDR4 DRAM-modul
• •  Aktivt kabel til Thunderbolt løsninger
• •  Microsoft vil være med til at nedbryde 'memory-muren'
• •  Opkoblere med lavt effektforbrug
• •  Gate driver optokobler til krævende applikationer
• •  Piezoelektriske MEMS oscillatorer med ultralav jitter
• •  Svensk institut tilbyder højspændings-impulstest
• •  Mouser og TDK-Lambda indgår global distributionsaftale