Send til en ven   Udskriv5/12 2011 kl. 13:21

MOSFETs i miniaturepakning

Diodes lancerer de første MOSFET i miniature DFN1212-3 pakning, der kan bruges som drop-in erstatning for SOT723 alternativer (in english).

Diodes Inc. has announced the introduction of its first MOSFETs to be housed in the miniature DFN1212-3 package.  With a junction to ambient thermal resistance (Rthj-a) of 130ºC/W, the package supports a power dissipation of up to 1W under continuous conditions, ensuring significantly cooler operation than that achievable with existing footprint-compatible SOT723 alternatives characterized by an Rthj-a performance of 280ºC/W.

Occupying the exact same 1.44mm2 printed circuit board area and with the same low profile 0.5mm off-board height as the less thermally efficient SOT723 packaged MOSFETs, these leadless DFN1212-3 packaged alternatives are drop-in replacements for high reliability signal and load-switching applications in a broad range of high portability consumer electronics products including digital cameras, tablet PCs and smartphones.

The MOSFET pair initially released by Diodes Incorporated are 20V rated and comprise the DMN2300UFD N-channel and the DMP21D0UFD P-channel parts.  Helping to dramatically reduce conduction losses and power dissipation, the N-channel MOSFET presents a typical RDS(ON) of just 400mΩ at VGS of 1.8V, which is approximately 50% lower than the most popular SOT723 packaged alternatives.

30V and 60V rated parts will follow in the DFN1212-3 package, along with a comprehensive range of bipolar devices.

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