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Send til en ven   Udskriv9/2 2012 kl. 15:42
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SiC JFETs med ultralave switchingtab

Semisouth Laboratories introducerer normally-on SiC-baserede JFETs, der sigter mod brug i bl.a. microinvertere (in english).

SemiSouth Laboratories, Inc., a leading manufacturer of silicon carbide (SiC) transistor technology for high-power, high-efficiency, harsh-environment power management and conversion applications, has launched the SJDP120R340, a normally on SiC trench JFET that, when compared with silicon MOSFETs, enables higher switching speeds and substantially lower losses.

Rated at 1200V with a maximum on-state resistance of 340 mΩ (typical RDS,on of 270 mΩ), these new devices feature a positive temperature coefficient for ease of paralleling and extremely fast switching with no tail current at 150 °C. Key applications include photovoltaic microinverters, SMPS and UPS, motor drives, and induction heating.


- Because of the small die size and our compact device design, the new SJDP120R340 normally on SiC trench JFETs are very cost-effective. Samples are available today; with volume production set to begin in Q2 2012 with pricing below $7 in quantities of 1000, explains SemiSouth’s Director of Sales, Dieter Liesabeths.

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