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Send til en ven   Udskriv25/5 2011 kl. 13:40
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OKI introducerer ferroelektrisk RAM

OKI går nu ind på markedet for ferroelektriske RAM (FeRAM) hukommelser med en familie af komponenter med en kapacitet op til 256 kbit (in english).

OKI Semiconductor (part of the ROHM Group) is developing a new ferroelectric RAM (FeRAM) technology. This new series will amend the memory line-up of the ROHM Group, which already consists of EEPROM, DRAM and P2ROM.

FeRAM is a non-volatile memory that uses a ferroelectric film as a capacitor for data storage. Compared to other non-volatile memory as EEPROM and Flash is has the advantage of a much lower power consumption (1:400 or less), a high-speed writing (similar to DRAM) and a significant higher number of writing cycles (1012 times).


Together with the data retention of 10 years these features enable engineers to use FeRAM in many applications, where a reliable storage of data is mandatory such as accounting, configuration and status information in consumer, industrial and car multimedia applications.

The initial product line-up is:
* 32kbit density with SPI I/F in SOP8
* 64kbit density with I2C I/F in SOP8
* 256kbit density with SPI I/F in SOP8
* 256kbit density with parallel I/F in TSOP28

First samples of different devices with serial (I2C or SPI) or parallel interface are already available to evaluate the new parts. Mass production is scheduled for the third quarter 2011.

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