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Send til en ven   Udskriv9/1 2012 kl. 10:28
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SLC NAND flash med indbygget fejlkorrektion

Toshiba annoncerer single level celle (SLC) flash med indbygget EEC. Der lanceres henholdsvis 4- og 8 Gbit versioner (in english).

Toshiba Electronics Europe (TEE) has announced the development of BENANDTM, a versatile, multi-application single level cell (SLC) NAND flash memory with an embedded error correction code (ECC). BENAND’s diverse applications include LCD TVs and digital cameras along with robots and other industrial applications. Samples of eight BENAND products in two capacities, 4Gigabit and 8Gigabit, will be available from today and mass production will follow from March 2012.
 
The simple interface and high reliability of small capacity SLC NAND has won it wide use in consumer applications and industrial programming. Until now, the ECC has been embedded in the host processor and corrected 1 bit per 512 bytes. However, advances in memory process technology require enhanced error correction; more than 4 bit correction per 512 bytes for NAND flash fabricated with a 32nm process.


For NAND flash memory without ECC fabricated with 32nm and beyond, the controller in the host processor must be changed to secure the required level of correction.
 
BENAND removes the burden of ECC from the host processor while minimising protocol changes and allowing host processors to support leading edge process NAND flash memory in a timely manner. BENAND embeds an ECC with an error correction of 4 bit per 512 bytes onto Toshiba’s cutting edge 32nm process SLC NAND flash memory. Package and pin configuration compatibility are assured with general SLC NAND flash, allowing easy replacement of existing products.
 
Toshiba plans to expand the BENAND lineup to include 24nm process NAND flash memory products after summer 2012.

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