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Send til en ven   Udskriv13/1 2011 kl. 13:49
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Power MOSFETs med halveret effekttab

Renesas lancerer nye high-voltage power MOSFET med en effekttab, der angives til omkring 52 procent mindre eksisterende generationer (in english). 

Renesas Electronics has announced the availability of a new high-voltage N-channel power metal-oxide-semiconductor field-effect-transistor (MOSFET) product, the RJK60S5DPK, for power supply units. The new power MOSFET delivers high efficiency and low power consumption for PC servers, communication base stations, and solar power generation systems.

The new RJK60S5DPK power MOSFET is ideal for use in the primary power switching circuit of a power supply unit, which converts alternating current (AC) to direct current (DC). It is the first product in Renesas Electronics’ high-voltage power MOSFET series, which employs a high-precision super junction structure to achieve a figure of merit, a key overall performance index for power MOSFET devices. The RJK60S5DPK delivers a performance improvement of approximately 90 percent compared to the company’s existing power MOSFET products.


Recently, demand has grown for improved efficiency in the power supply circuits to reduce energy consumption. There is a particularly strong demand for low power consumption though improved power conversion efficiency in high-output switching power supplies for flat-panel TVs, communication base stations, PC servers, and solar power generation systems. This has spurred demand for power MOSFET products with lower on-resistance.

However, there are limits to the improvements that can be achieved using a conventional planar structure. Renesas Electronics therefore made use of its accumulated expertise in power device technology to develop a high-precision super junction structure employing a deep-groove formation process. This has made it possible to produce MOSFET devices with a lower on-resistance per unit of area. 

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