Seminarer • konferencer
kurser • messer
Send til en ven   Udskriv12/5 2011 kl. 15:06
Send til en ven

Ultrakompakte og effektive MOSFETs

Diodes lancerer famile af 'ultra-miniature' MOSFETs, der kun optager 0,6mm2 på et PCB.

Diodes Inc. has unveiled a portfolio of high performance MOSFETs packaged in the ultra-miniature DFN1006-3 package.  Occupying just 0.6mm2 of PCB area, the package takes less than half the board space of equivalent SOT723 packaged parts and with a junction to ambient thermal resistance (Rthj-a) of 256 ºC/W, supports a power dissipation of up to 1.3W under continuous conditions, double that of comparable alternatives.

The resulting cooler running and space saving advantages of the MOSFETs coupled with an off-board height of only 0.4mm makes them particularly well suited to thin profile portable consumer electronics, including tablet PCs and smart phones.  Both n-channel and p-channel devices are initially being offered by Diodes with breakdown voltage ratings of 20V, 30V and 60V for use in a variety of high reliability load switching, signal switching and boost conversion applications.

The 20V rated DMN2300UFB4 n-channel MOSFET for example displays an Rdson performance of just 150mohm, more than 50% lower than competing solutions, helping to dramatically reduce conduction losses and power dissipation.  Its p-channel companion, the 20V rated DMP21D0UFB4 offers a similar class-leading performance.  Electrostatic discharge ratings of these MOSFETs is also high, at respectively 2kV and 3kV.
www.diodes.com

Forrige12345678910111213141516
171819Næste

Elektronik & Data • Odsgard A/S • Stationsparken 25 • 2600 Glostrup • Tlf: +45 4345 1063