1700V SiC powermodul til de mest krævende applikationer
ROHM Semiconductor løfter sløret for 1700V/250A rated SiC (Silicium Carbide) powermodul til brug udendørs powergenerende systemer som invertere til solcellebaseret forsyninger og industrielle high-power systemer (in english).ROHM recently announced the development of a 1700V/250A rated SiC power module that provides the industry's highest level of reliability optimized for outdoor power generation systems, such as inverters for solar power and converters for industrial high-power supplies.
In recent years, due to its energy-saving benefits, SiC is seeing greater adoption in 1200V applications such as electric vehicles and industrial equipment. The trend towards higher power density has resulted in higher system voltages, increasing the demand for 1700V products. However, it has been difficult to achieve reliability, and so IGBTs are typically prefered for 1700V applications.
In response, ROHM was able to reach high reliability at 1700V, while maintaining the energy-saving performance of its popular 1200V products, achieving the first successful commercialization of 1700V rated SiC power modules.
The BSM250D17P2E004 utilizes new construction methods and coating materials to prevent dielectric breakdown and suppress increases in leakage current. As a result, high reliability is achieved that prevents dielectric breakdown even after 1,000 hours under high temperature high humidity bias testing (HV-H3TRB). This ensures high 1700V withstand voltage even under severe temperature and humidity environments.
By incorporating ROHM's proven SiC MOSFETs and SiC Schottky barrier diodes into the same module and optimizing the internal structure make it possible to reduce ON resistance by 10% over other SiC products in its class. This translates to improved energy savings in any application.
Going forward, we will continue to expand our lineup to ensure worry-free use by customers and work to increase demand by offering evaluation boards that allow easy testing and verification of our SiC modules.