Power, strømforsyning, EMC/ESD


Første GaNSens half-bridge power IC'er

Første GaNSens half-bridge power IC'er

Navitas præsenterer half-bridge GaN power IC, der integrerer to GaN FETs med drive-, kontrol- og sensing-funktioner samt autonom beskyttelse og level-shift isolering (in english).

Navitas Semiconductor, an industry leader in GaN power ICs, has announced the industry’s first GaNSense half-bridge power ICs. These half-bridge ICs enable a new level of MHz switching frequencies while dramatically reducing the system cost and complexity compared to existing discrete solutions.

GaNSense half-bridge power ICs integrate two GaN FETs with drive, control, sensing, autonomous protection, and level-shift isolation, to create a fundamental power-stage building block for power electronics.

This revolutionary single-package solution reduces component count and footprint by over 60% compared to existing discretes, which cuts system cost, size, weight, and complexity.

The integrated GaNSense technology enables unprecedented autonomous protection for increased reliability and robustness, combined with loss-less current sensing for higher levels of efficiency and energy savings.

The high integration levels also eliminate circuit parasitics and delays, making MHz-frequency operation a reality for a broad range of AC-DC-power topologies including LLC resonant, asymmetric half-bridge (AHB), and active-clamp flyback (ACF). The GaNSense half-bridge ICs are also a perfect fit for totem-pole PFC, as well as motor-drive applications.

GaNSense half-bridge ICs are anticipated to have a significant impact in all Navitas target markets including mobile fast chargers, consumer power adapters, data center power supplies, solar inverters, energy storage, and EV applications.

- After bipolar transistors were replaced by silicon MOSFETs in the late 70s and early 80s, the introduction of Navitas GaN technology represents the second revolution in power, with a huge increase in switching frequency and efficiency, and major reductions in system size and cost, says Gene Sheridan, CEO.
- Our initial GaNFast ICs enabled an increase from 50-60 kHz to 200-500 kHz, and now the GaNSense half-bridges elevate those benefits to the MHz range. The GaN revolution continues.

The initial family of GaNSense Half-Bridge ICs includes the NV6247 which is rated at 650 V, 160 mOhms (dual), and the NV6245C, rated at 275 mOhms (dual), both in an industry-standard, low-profile, low-inductance, 6 x 8 mm PQFN package.

The NV6247 is immediately available in production with 16-week lead times, while the NV6245C is sampling to select customers and will be broadly available in production to all customers in Q4 2022. A wide range of package styles and power levels will become available in this GaNSense Half-Bridge IC family in the coming quarters
8/9 2022