Højtydende 650 V og 1200 V SiC FETs
UnitedSiC, der har specialiseret sig i silicon carbide (SiC) powerkomponenter, udvider firmaets UF3C FAST portefølje med 650V og 1200V high-performance SiC FETs (in english).UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, expands its UF3C FAST Series product offering by introducing an additional range of 650 V and 1200 V high-performance silicon carbide FETs in a TO-247-4L 4-pin Kelvin Sense package option. Based on an efficient cascode configuration, this new series provides designers with very fast switching, high-power devices in a package capable of high-power dissipation.
The Kelvin package avoids gate ringing and false triggering which would otherwise require slowing of switching speeds to manage the large common source inductance of 3-leaded packages. The 4-leaded Kelvin connection packages offer maximum operating temperatures of 175°C, excellent reverse recovery, low gate charge along with up to 2X lower switching losses.
Designers of Totem Pole PFC stages, LLC and Phase Shifted Full Bridge converters, used in EV chargers, telecom and server power applications can achieve new levels of switching speed, efficiency, ease of use, and power density with the new UF3C series.
Compared with other wide band-gap technologies, the SiC cascode devices offer standard 12V gate drive, and have assured avalanche ratings (100 percent production-tested). The 4-terminal packages, which form part of the UF3C FAST series, offer easy screw or clamp mounting with very low junction-to case-thermal resistance allowing lower temperature rise for a given power dissipation or higher power operation, taking advantage of the high junction temperature capabilities of SiC.
- The expanded UF3C FAST Series cascodes in 4-leaded TO-247 packages are simple to use, even at higher switching frequencies. They offer top efficiency and excellent thermal dissipation in high power designs, says Anup Bhalla, VP Engineering at UnitedSiC.