GaN transistorer i industristandard MOSFET-pakninger
I bestræbelserne på at standardisere GaN-produkter lancerer Infineon CoolGaN G3 transistorer i RQFN 5x6 og RQFN 3.3x3.3 standardpakninger (in english).
Gallium Nitride (GaN) technology plays a crucial role in enabling power electronics to reach the highest levels of performance. However, GaN suppliers have thus far taken different approaches to package types and sizes, leading to fragmentation and lack of multiple footprint-compatible sources for customers.
Infineon Technologies addresses this challenge by announcing the high-performance gallium nitride CoolGaN G3 Transistor 100 V in a RQFN 5x6 package (IGD015S10S1) and 80 V in a RQFN 3.3x3.3 package (IGE033S08S1).
- The new devices are compatible with industry-standard silicon MOSFET packages, meeting customer demands for a standardized footprint, easier handling and faster-time-to-market, says Dr. Antoine Jalabert, Product Line Head for mid-voltage GaN at Infineon.
The CoolGaN G3 100 V Transistor devices will be available in a 5x6 RQFN package with a typical on-resistance of 1.1 mΩ. Additionally, the 80 V transistor in a 3.3x3.3 RQFN package has a typical resistance of 2.3 mΩ. These transistors offer a footprint that, for the first time, allows for easy multi-sourcing strategies and complementary layouts to Silicon-based designs. The new packages in combination with GaN offer a low-resistance connection and low parasitics, enabling high performance transistor output in a familiar footprint.
Moreover, this chip and package combination allows for high level of robustness in terms of thermal cycling, in addition to improved thermal conductivity, as heat is better distributed and dissipated due to the larger exposed surface area and higher copper density.
Samples of the GaN transistors IGE033S08S1 and IGD015S10S1 in RQFN packages will be available in April 2025.
