SiC-modul baner vejen for solid-state transformere

Microchip præsenterer 3,3 kV HV-D3 mSiC powermoduler, der kan accelerere brugen af solid-state transformere i AI datacentre og andre højspændingsapplikationer (in english).

Microchip announces the availability of its new 3.3 kV HV-D3 mSIC powermodules, designet to simplify and accelerate the adoption of solid-state transformers (SSTs) in AI hyperscale datacenters and other high-voltage. 

The new modules integrated 3.3 kV silicon carbide (SiC) mSIC MOSFETs and Schottky diodes in an industristandard 62 mm package, enabling efficient power delivery from the medium-voltage grid directly to the server rack.

As AI data centers continue to scale, token generation is limited by power availability, while efficiency is a defining factor for return on investment. Traditional architectures based on bulky, low-frequency transformers add complexity, increase losses and limit flexibility.

Solid-state transformers represent a foundational shift in power delivery, reducing conversion stages and enabling higher system efficiency. The industry's shift toward higher-voltage DC rack distribution in next-generation AI facilities further amplifies the value of SSTs, which are intended to deliver regulated DC directly from the medium-voltage grid with fewer conversion stages.

Microchip’s HV-D3 mSiC modules are engineered specifically to meet these requirements. The modules use Microchip’s mSiC MOSFET technology, which offers highly competitive RDS(on) stability over temperature, with packaging that supports 6 kV isolation, incorporates CTI 600-rated materials and features extended creepage distances, designed to allow safe series connection for high-voltage operation. 

A silicon nitride substrate delivers enhanced thermal conductivity and power-cycling capability, helping designers achieve higher power density with less aggressive cooling.

- As AI datacenters continue to push limits in supplying power from the grid to the GPU, the need for solid-state transformers becomes increasingly important, says Clayton Pillion, vice president of Microchip’s high-power solutions business unit, and he adds:

- Our 3.3 kV HV-D3 mSiC power modules enable designers to reduce the number of series connected devices by roughly half versus lower-voltage SiC alternatives when interfacing to 13.8 kV or 34.5 kV grids. The devices also address a key gap in the industrial market for 100 - 300A products, bridging discrete SiC devices and much larger power modules.