Første 80V half-bridge GaN FET modul
Texas Instruments lancerer fuldt integreret GaN FET powertrin prototype, der gør det enkelt at evaluere fordelene ved GaN teknologien (in english).
Texas Instruments (TI) has introduced the industry's first 80-V, 10-A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage prototype, which consists of a high-frequency driver and two GaN FETs in a half-bridge configuration - all in an easy-to-design quad flat no-leads (QFN) package. FThe new LMG5200 GaN FET power stage will help accelerate market adoption of next-generation GaN power-conversion solutions that provide increased power density and efficiency in space-constrained, high-frequency industrial and telecom applications.
- One of the biggest barriers to GaN-based power design has been the uncertainties around driving GaN FETs and the resulting parasitics due to packaging and design layout, says Steve Lambouses, vice president of TI's High-Voltage Power Solutions business.
- We help power designers realize the full power potential of GaN technology by offering them a complete, reliable power-conversion ecosystem of optimized integrated modules, drivers and high-frequency controllers in advanced, easy-to-design packaging.
Typically, designers who use GaN FETs that switch at high frequencies must be careful with board layout to avoid ringing and electromagnetic interference (EMI). TI's LMG5200 dual 80-V power stage prototype significantly eases this issue while increasing power-stage efficiency by reducing packaging parasitic inductances in the critical gate-drive loop. The LMG5200 features advanced multichip packaging technology and is optimized to support power-conversion topologies with frequencies up to 5 MHz.
The easy-to-use 6-mm by 8-mm QFN package requires no underfill, which significantly simplifies manufacturing. The reduced footprint solidifies the value of GaN technology and will help increase adoption of GaN power designs in many new applications, ranging from new high-frequency wireless charging applications to 48-V telecom and industrial designs.
http://www.ti.com/gan-pr
