40nm DRAM chip og modul
Samsung lancerer nu første 1 Gigabit DDR2 DRAM, der er fremstillet i 40nm teknologi (in english).
Samsung Electronics Co., Ltd., announced that it has developed and validated the first 40-nanometer (nm) class DRAM chip and module. This new 1-Gigabit DDR2 component (x8) and a corresponding 1-Gigabyte 800Mbps (Megabits per second) DDR2 SODIMM (small outline DRAM inline memory module) - both to be processed at 40-nm - have been certified in the Intel Platform Validation program for use with the Intel GM45 series Express mobile chipsets.- We accentuate our commitment as technology leader to deploying the most efficient means in the DRAM business. For this we are using the most innovative technology and system/platform validated operability, says Gerd Schauss, Director of Memory Marketing, Samsung Semiconductor Europe.
The migration to 40-nm class process technology is expected to accelerate the time-to-market cycle by 50 percent - to just one year. Samsung plans to apply its 40-nm class technology to also develop a 2Gb DDR3 device for mass production by the end of 2009.
The new 40-nm class process technology will drive further reductions in voltage against a 50-nm class device, which Samsung expects to translate into about a 30 percent power savings
The finer DRAM technology node also delivers an approximately 60 percent increase in productivity over 50-nm class process technology. In addition, Samsung expects that its 40-nm process node will mark a significant step toward the development of next generation, ultra-high performance DRAM technologies such as DDR4.
