Første mobile applikationsprocessor i 14nm FinFET procesteknologi

Samsung annoncerer mobile applikationsprocesser, der er fremstillet i en 14nm FinFET teknologi, hvilket i sammenligning med 20nm devices forøger hastigheden med 20 procent. Effektforbruget reduceres samtidig med 30 procent (in english).

- Samsung’s advanced 14nm FinFET process technology is undoubtedly the most advanced logic process technology in the industry, says Gabsoo Han, Executive Vice President of Sales & Marketing, System LSI Business, Samsung Electronics.

- We expect the production of our 14nm mobile application processor to positively impact the growth of the mobile industry by enabling further performance improvements for cutting-edge smartphones.
 
The 14nm FinFET process is the most advanced technology available in the market that achieves the highest levels of efficiency, performance and productivity. When compared to Samsung’s 20nm process technology, it enables up to 20 percent faster speed, 35 percent less power consumption and 30 percent productivity gain.

By successfully incorporating 3D FinFET structure on transistors, Samsung has overcome performance and scaling limitations of the planar structure used in previous 20nm and older processes and gained a significant competitive edge in advanced semiconductors for the mobile industry.

This ground-breaking accomplishment has resulted from Samsung’s unparalleled R&D efforts in FinFET technology since the early 2000s. Starting with a research article presented at IEDM (International Electron Devices Meeting) in 2003, Samsung has since continuously made progress and announced its technological achievements in FinFET research and has also filed a pool of key patents in the field.

As for memory, Samsung has been successfully mass producing its proprietary 3D V-NAND products since 2013. Together with its three-dimentional (3D) transistor based FinFET process technology, Samsung has strengthened its leadership in 3D semiconductors in both memory and logic semiconductors that addresses the current scaling limitations with planar designs.
Samsung’s leading-edge14nm FinFET process is adopted by its Exynos 7 Octa, and will be expanded to other products throughout the year.