Ny CoolMOS-familie introduceret

Infineon's nye CoolMOS MOSFET's kombinerer fordele ved to teknologier (in english).

At the China Power Show in Shenzhen, Infineon Technologies launched its next-generation 600V CoolMOS C6 series of high-performance MOSFETs (metal-oxide semiconductor field-effect transistors).

With the 600V CoolMOS C6 series, energy conversion applications such as PFC (Power Factor Correction) or PWM (Pulse Width Modulation) stages can be made significantly more energy efficient.

The new C6 technology combines the advantages of modern superjunction or compensation devices including ultra-low area specific on-resistance (for example, only 99mOhm in a TO-220 package), and reduced capacitive switching losses while offering easy control of the switching behavior as well as high body diode ruggedness.

The C6 series is Infineon’s fifth CoolMOS generation of MOSFETs. With the predecessor CoolMOS C3 and CoolMOS CP series the company has continuously increased the switching speed and reduced the on-resistance. While the CoolMOS C3 devices are quite universal, the CP family addresses dedicated applications requiring highest switching speed and lowest R DS(on) related to the package.

Best of to worlds

With the new 600V CoolMOS C6 devices Infineon offers the best of two worlds. Manufacturers of power supplies, for example, benefit from the advantages of the superjunction CP family such as extremely low capacitive losses and very low area specific R DS(on) values, which make the power supplies more efficient, more compact, lighter and cooler.

At the same time, the control of the switching behavior and the robustness against parasitic inductances and capacitances in the board are significantly improved, which simplifies system layout in comparison to designs based on the CP series.

In detail this means that in the CoolMOS C6 series the interaction of gate charge, voltage/current slope and internal gate resistance is tuned so that even with very low gate resistances down to zero Ohm no excessive voltage or current slopes can appear. Additionally, the C6 devices show high ruggedness against hard commutation of the body diode, which can help to avoid the usage of expensive fast body diode components.

Infineon believes that ease of use and energy efficiency on the level of its predecessor CoolMOS C3 and the additional improvement in light load efficiency will make the CoolMOS C6 series the benchmark for hard switching applications. On the other hand very low energy stored in the output capacitance and hard commutation ruggedness makes the device ideal for resonant switching applications.

The CoolMOS C6 devices are easy to design-in and very well suited for various energy efficient applications such as power supplies or adapters for PCs, notebooks or mobile phones, lighting (HID, High-Intensity Discharge) products, as well as displays (LCD or Plasma TV) and consumer applications like gaming consoles. Infineon’s latest power semiconductor generation allows for highly reliable end products compliant with today’s high efficiency requirements and government regulations.

Infineon introduces the new CoolMOS C6 family with 600V devices and a broad portfolio ranging from 70mΩ to 3.3Ω. Samples of the IPA60R190C6 providing 600V with a R DS(on) of 190mΩ in a TO-220 Fullpack are available. Volume production of the first members of the family is scheduled for August 2009.

Pricing for a single unit of the IPA60R190C6 (600V CoolMOS C6, R DS(on) of 190mΩ, TO-220 Fullpack) is US $0.88 in 10k unit quantity. The IPD60R950C6 (600V CoolMOS C6, R DS(on) of 950mΩ, DPAK) is available for US $0.30 per piece for the same volume.