Skyworks PA'er i første LTE håndsæt
Samsung benytter 'Power Amplifier' moduler fra Skyworks i ny LTE terminal (in english).
Skyworks Solutions, Inc. has announced that two of its power amplifier modules are enabling the first commercial long term evolution (LTE) handset in the United States. Samsung’s newest 4G mobile phone, the Craft, was launched in Las Vegas by MetroPCS and leverages the SKY77702 and the SKY77703.
The carrier expects to cover 19 markets by 2011 and approximately 110 million LTE customers in major cities such as Dallas, Los Angeles and New York. Today’s 4G systems offer a comprehensive solution where data and streamed multimedia are available to consumers anytime, anywhere at higher data rates than previous generation networks. In July 2010, Skyworks enabled the world’s first commercial LTE device, Samsung’s high speed 4G USB modem.
- Skyworks is delighted to once again be at the forefront of the technology powering next-generation devices that allow consumers to enjoy higher data rates and always-on connectivity, says Gregory L. Waters, executive vice president and general manager of front-end solutions at Skyworks.
- Our solutions benefit handset OEMs and smart phone providers, as well as infrastructure suppliers and operators worldwide by improving efficiency and performance, boosting network throughput, and simplifying roaming to provide the best consumer experience.
The Craft, or SCH-R900, comes with a full hypertext markup language (HTML) Web browser, full touch display with a slide-out QWERTY keyboard, WiFi connectivity, and a touch screen display. The handset was designed as an entertainment device for providing fast connectivity to the Web and access to streaming video and music.
Skyworks’ Power Amplifier module portfolio
The SKY77702 and the SKY77703 PAMs are fully matched 10-pad surface mount modules (SMMs) developed for wideband LTE applications. These small and efficient modules pack full 1850 – 1910 MHz (SKY77702) and 1710 – 1785 MHz (SKY77703) bandwidth coverage into a single compact package.
Because of high efficiencies attained throughout the entire power range, both devices deliver unsurpassed talk-time advantages. Both modules also meet the stringent spectral linearity requirements of LTE data transmission with high power added efficiency (PAE). In addition, a directional coupler is integrated into the devices, thus eliminating the need for any external coupler.
The single gallium arsenide (GaAs) microwave monolithic circuit (MMIC) contains all active circuitry in the modules. The MMIC contains on-board bias circuitry, as well as input and interstage matching circuits. Output match into a 50-ohm load is realized off-chip within the device packages to optimize efficiency and power performance.
The modules are manufactured with Skyworks’ indium gallium phosphide (InGaP) heterojunction bipolar transistor (HBT) bipolar field effect transistor (BiFET) process that provides for all positive voltage DC supply operation while maintaining high efficiency and good linearity.
These PAMs are available today in volume production.
