Infineon etablerer højvolumen 300mm-baseret GaN-produktion i Europa

Infineon etablerer Europas – og verdens – første produktionsanlæg til fremstilling af galliumnitrid (GaN) powerhalvledere i stor skala med afsæt i 300-millimeter (diameter) wafere (in english).

Infineon Technologies AG is establishing the world’s first high-volume manufacturing facility for next-generation gallium nitride (GaN) power semiconductors on 300-millimeter wafers in Europe. 

Gallium nitride is an advanced semiconductor material that can switch and convert electricity much more efficiently. This enables smaller, more powerful and more energy-efficient electronic systems with lower energy loss and reduced heat generation. Analysts expect the market for GaN power semiconductors to grow to approximately USD 3.5 billion by 2031, representing annual growth of around 35 percent between 2025 and 2031.

As part of the project, Infineon will invest around €1.1 billion in its existing cleanroom facilities at the Villach site by 2034. Leveraging both the existing and upgraded infrastructure will enable highly efficient and cost-effective expansion of manufacturing capacity. Production is scheduled to start by the end of 2027. 

Infineon’s investment addresses the rapidly growing demand for high-performance power supply solutions. Gallium nitride enables significant efficiency gains in numerous applications, such as AI data centers, energy infrastructure, e-mobility, robotics and consumer electronics.

Infineon is a leader in gallium nitride power electronics. Two years ago, Infineon achieved a technological milestone by successfully processing the world’s first 300-millimeter gallium nitride wafers. 

Chip production on 300-millimeter wafers is more advanced and significantly more efficient than 200-millimeter wafer production, since the larger wafer diameter yields 2.3 times as many chips per wafer. Infineon is now transferring this technology to the world’s first high-volume manufacturing facility serving customers.

- This substantial investment shows our clear commitment to strengthening the European semiconductor ecosystem and Europe’s technological sovereignty. By establishing high-volume manufacturing on 300-millimeter wafers, we will be the first company in the world to bring gallium nitride power electronics into volume production, says Jochen Hanebeck, CEO of Infineon Technologies AG, and he continues:

- In doing so, we are paving the way for the widespread use of gallium nitride in a wide range of key applications in areas such as artificial intelligence, energy infrastructure, e-mobility and robotics. This new, state-of-the-art manufacturing facility translates innovation leadership into direct customer benefits.

The investment in this first-of-a-kind technology is being supported under the European Chips Act. The European Commission approved €319 million in state aid. The formal funding commitment by the Austrian Federal Ministry for Economic Affairs, Energy and Tourism is expected within the stipulated time limits. 

By approving the funding from the Federal Ministry for Economic Affairs, Energy and Tourism, the European Commission is not only enabling the expansion of manufacturing capacities in Europe but is also generating positive spillover effects in related sectors – for example, through cross-border collaboration with universities and research institutions and improved access to innovative technologies and products for start-ups and small and medium-sized enterprises.

- Competitiveness and technological sovereignty emerge where excellent research is translated into industrial value creation. This is precisely where our flagship project comes in: From Austria, we are bringing innovation into industrial application, strengthening our technological leadership and securing highly skilled jobs. Microelectronics is a key industry with enormous leverage for the economy and society, says Sabine Herlitschka, CEO of Infineon Technologies Austria AG. 

- The entire Austrian semiconductor ecosystem benefits – from research organizations and universities to industrial partners. We are thus sustainably strengthening Europe’s competitiveness and strategic autonomy in microelectronics, emphasizes Sabine Herlitschka, CEO of Infineon Technologies Austria AG, she adds.

The investment strengthens Villach’s role as a global competence center for power electronics and new semiconductor materials. Infineon Austria currently employs around 5,800 people, approximately 4,800 of them at the Villach site. 

Together with universities, research institutions, start-ups and industry partners, Infineon forms the core of an internationally recognized microelectronics ecosystem in southern Austria. The establishment of the new 300-millimeter GaN manufacturing facility will also create positive synergies with the power electronics research and development activities located in Villach.