Nye 50V GaN HEMTs
Cree udvider nu firmaets familie af unikke 50V GaN HEMTs til RF og mikrobølge applikationer op til 4 GHz (in english).
Cree, Inc. has extended its family of unmatched 50V gallium nitride (GaN) high electron mobility transistors (HEMTs) with a new 50W packaged part that provides high performance broadband solutions for a variety of RF and microwave applications up to 4GHz, including narrow band UHF applications, L- and S-Band applications, and multi-octave bandwidth amplifiers.Available in two-leaded flange and pill packages, the new CGHV40050 exhibits high efficiency, high gain, and wide bandwidth performance - all of which can be demonstrated using the a 0.8–2.0GHz high power amplifier (HPA) reference design - in addition to high power density, and low parasitics.
Delivering 50W typical output power up to 4GHz operation, the CGHV40050 typically provides 17.5dB small signal gain at 1.8GHz and 55% efficiency at PSAT, and is rated for an operating junction temperature (TJ) of 225°C, and case operating temperatures (TC) spanning -40°C to +80°C.
